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  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0388_DLA_T1.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0462_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0359_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0298_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0131_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0268_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0429_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0196_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0386_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0009_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0153_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0451_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0427_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0273_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0167_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0439_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0019_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0012_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0323_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0139_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0094_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0076_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0424_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0331_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0304_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0449_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0465_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0237_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0209_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0040_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0034_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0030_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0429_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0422_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0362_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0328_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0312_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0127_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0443_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0441_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0388_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0016_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0007_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0335_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0270_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0233_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0211_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0130_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0477_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0024_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0326_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0271_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0265_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0212_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0215_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0197_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0157_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0149_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0471_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0013_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0004_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0286_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0160_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0494_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0492_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0453_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0437_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0032_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0359_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0203_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0155_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0296_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0162_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0488_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0368_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
<br />
Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0367_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0234_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0148_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0080_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0039_DLA.jpg
  • Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum
    140319_IEEE_BALIGA_0022_DLA.jpg
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